Metal organic chemical vapor deposition for III-nitride epitaxial growth, 2D materials synthesys (graphene, sylicen)

The only available MOCVD equipment in operating condition for IIInitride epitaxial thin films growth modernized for 2D materialth growth (graphene, silicen). 

  • • Wafers diameters: 2˝
  • • Elemental purity: 99,999 %.
  • • Temperature: 400–1200°С.
  • • Flowing gases: N2, H2.
  • • Process gases: N2, H2, NH3, SiH4.
  • • Precursors: Triethylboron, Trimethylaluminium, Tritertia-
       rybutylaluminium, Trimethylgallium, Triethylgallium,
       Trimethylindium, Dimethylaminopropyl-dimethyl-indium .
  • • Wafers number in one technological process: 2 wafer;
  • • Equipment contain combined extract and input ventilation.

Modernisation is needed:

  • • Reagents, precursors for systematical processing during 2 years;
  • • Reactor modermization;
  • • Reflectometry;
  • • Vacuum system modernization;
  • • Software modernization.

The amount required for modernization (50.000–100.000 USD)