Electron-beam evaporation of
metal thin films

System «17/4-001» for termal deposition of:
Al, Cu, Ti, Ni, Mo, TiN, SiT, SiTa, SiMo, SiN, SiOthin films.

    • Number of devices: 4
    • Films thickness: 10nm–3 µm
    • Deposition on: Si, sapphire, glass, quartz, GaAs, etc.
    • Wafer diameters: 2–6˝.
    • Films quality: poly- & monocrystalline.

    • Processes flows at vacuum pressure:~ 5×10-5–8×10-6 Torr.
    • Elemental purity: 99,999 %.
    • Temperature: preliminary wafers heating up to 400 °C.
    • Gases that can be utilizing during the processes: Ar, N2, He.
    • Wafers number in one technological run: 1–25.
    • Equipment contains RF generator 4/27.
    • Utilizing power 5 kW.

Modernisation is needed:
• E-beam gun;
• System for gas flow;
• Turbomolecular pump;
• Network connection;
• Software for film growth automatization.

The amount required for modernization ~7.000 USD.