BRDL-4605, Bio Rad, (USA)
- • The definition of electrically active defects (structural defects
radiation and micro impurities) in silicon and other
semiconductors, which are characterized by the presence
of deep levels (DL) in the bandgap of the material.
- • Identification of DL, analysis of their concentrations NDL, the
energy position in the band gap and concentration profiles
near the surface.
- • Definition of cross electron and holes trapping by deeper levels.
- • Schottky diodes;
- • p-n junctions;
- • MDS-driven junctions (diodes).
The minimum capacity of semicond. structures DL: 5-10 pF.
Sensitivity of NDL determination: 1×10-5 Nd, where Nd – basic dopant concentration in semiconductor.
Sensitivity of NDL determination in silicon with doping level 1.1×1015cm-3 is 1010 atm/cm3
Accuracy of DL activation energy: 0.01 eV