Articles and theses

T&A research Dept.
NP&RI Dept.
IC Dept.
  1. P. Deminskyi, A. Haider, E. Kovalska, N. Biyikli Graphene as Plasma-compatible Blocking Layer Material for Area-Selective Atomic Layer Deposition: A Feasibility Study for III-Nitrides. J. Vac. Sci. Technol. A 36, 01A107 (2018)
  2. Haider A., Yilmaz M., Deminskyi P., Eren H., Biyikli N. Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers RSC Adv., 2017, 6, 106109–106119
  3. Heterojunction SiGe bipolar transistors for silicon super-high frequency electronics
  4. VLSI based microelectronic coordinate-sensitive detector devices for element analysis materials
  5. Microelectronic coordinate-sensitive mass-spectrometer detector
  6. VLSI based microelectronic coordinate-sensitive detector for elemental analysis of materials
  7. Low noise amplifiers based on SiGe-HBT for ultra-wideband systems
  8. Charged particles coordinate-sensitive detector for spectroscopy
  9. Technology and characterization of Si based planar p-i-n photodiode for scintielectronic detectors
  10. The microstrip metal detectors
  11. The looking for new possibilities of improvement of receiving-detecting circuit for digital radiographic systems with advanced spatial resolution
  12. Detectors characteristics investigation based on scintillator-photodetector for digital radiography
  13. Research on Improvement of Receiving-Detecting Circuit for Digital Radiographic Systems with Advanced Spatial Resolution
  14. Strip Detector for high spatial resolution dosimetry in microbeam radiation therapy
  15. Silicon strip detectors for on-line X-ray microbeam characterisation and dosimetry
  16. Nuclear Instruments and Methods in Physics Research
  17. Development and characterisation of Si coordinate-sensitive detectors for high energy physics and nuclear physics
  18. Characteristics & radiation tolerance of a double-sided microstrip detector with polysilicon beasing resistors
  19. Planar sensors for dosimetry in mixed γ- and neutron fields
  20. Neutron dosimetry with planar silicon p-i-n diodes
  21. Position indication integrated circuit based on the photodetector line reading from CCD with buried channel
  22. Micro-strip metal foil detectors for the beam profile monitoring
  23. Micro-strip Metal Foil Detectors for the beam profile monitoring
  24. Radiation characteristics of α-, β-, γ- semiconductor detectors based on p-i-n structures and application in dosimetry and radiometric instruments
  25. Study of Si-based multielements p-i-n photodiode structures
  26. The development of multichannel coordinate-sensitive γ-, X-ray detector systems based on Si-integrated technology
  27. P-i-n- photodiodes based on high-resistivity Si and γ-, X-ray detectors scintillator-photodiodes
  28. Ultraviolet photodiodes based on zinc selenide (ZnSe)
  29. UV-A and UV-B ranges detectors based on silicon diodes with matrixes structure of p-n junction
  30. Development of detection units and software for dosimetric and radiometric instruments
  31. Plasma technologies for manufacturing of micro-strip metal detectors of ionizing radiation
  32. Challenges & ways related to the development of microelectronic technologies in Ukraine
  33. Spectral Characterization of a Blue-Enhanced Silicon Photodetector
  34. The development of microelectronics in Ukraine – way to the competitiveness of Ukrainian industry and economy
  35. A. Haider, P. Deminskyi, T. M. Khan, H. Eren, N. Biyikli Area-Selective Atomic Layer Deposition Using an Inductively Coupled Plasma Polymerized Fluorocarbon Layer: A Case Study for Metal Oxides J. Phys. Chem. C, 2016, 120 (46), pp 26393–26401
  36. M.S. Onachenko Superluminescent laser-integrated nanocarbonized matrix pumping the neodymium lasers YAG:Nd Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 367-371.
  37. V. Osinsky, N. Lyahova, N. Sukhoviy, V. Timofeyev, E. Faleyeva, E. Semenovskaya, A. Andryushchenko Simulation of Influence of Template Size on Misfit Dislocation in Nanostructures. 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO)
  38. Osinsky V.I., Lyahova N., Hlotov V., Sukhoviy N., Lytvyn O., Deminskyi P. Si/SiO2/III-nitrides nanotempletes. Memoirs of the Faculty of Physics 2014. N 2. 142304
  39. V.I. Osinsky, N.N. Lyahova, V.I. Hlotov, N.O. Suhovyy, O.S. Lytvyn, P.V. Deminskyi Photoluminescence spectrums of GaN/InGaN MQDs on GaN nanoroad Memoirs of the Faculty of Physics 2, 142304 (2014)
  40. V. Osinsky, P. Deminskyi, N. Lyahova, N. Syhoviy, H. Honarmand The Dependence Of Si/A3B5 Light Source Photoluminescence Efficiency On Dynamic Displacements Of Atoms In The Crystal Lattice 2014 IEEE XXXIV International Scientific Conference Electronics and Nanotechnology (ELNANO)
  41. Osinsky V., Deminskyi P., Lyahova N., Motornyi A., Masol I., Syhkoviy N. The temperature and concentration properties of Si/A3B5 RGB light sources. Optoelectronic information and energy technologies, 2 (24), 2012 Pp. 50-57
  42. P. Deminskyi, V. Osinsky Themperature process influence in Si/A3B5 RGB LED matrixes on reversive microprocessor light control. J. Data registration, storage and processing, 2, 2012, pp. 3-13
  43. Osinsky V., Lyahova N., Masol I., V. Grunianskaya, Deminskyi P., Syhkoviy N., V. Stonis, M. Onachenko Nanocarbide processes via MOCVD-epitaxy of III-nitride structures Optoelectronic information and energy technologies, 2 (24), 2012 Pp. 62-72
  44. V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminskyi Carbides of A3B5 for opto- and microelectronics compounds – new class materials Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012. V. 15, N 1. P. 55-60.
  45. V. Osinsky, I. Masol, V. Glotov, G. Gorokh, P. Deminskyi, N. Lyahkova. III-nitride growth mechanisms in the self-organized Alumina nanoreactors. Gallium, aluminum and indium nitrides. (2011) Saint-Petersburg, Russia
  46. V. Osinsky, I. Masol, N. Lyahova, P. Deminskyi Towards the creation of intelligent lighting via Si/III-nіtride LED structures integration. 8th All-Russian Conference. Gallium, aluminum and indium nitrides. (2011) Saint-Petersburg, Russia
  47. V. Osinsky, O. Dyachenko Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 2. P. 142-144
  48. V. Osinsky, D. Murchenko, H. Honarmand Si/A3B5 one chip integration of white LED sources Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 3. P. 240-250.
  49. A. Polyakov, A. Markov, M. Mezhennyi, A. Govorkov, V. Pavlov, N. Smirnov, A. Donskov, L. D’yakonov, Y. Kozlova, S. Malakhov, T. Yugova, V. Osinsky, G. Gorokh, N. Lyahova, V. Mityukhlyaev, and S. Pearton Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask J. Applied Physics Letters 94, 022114 (2009)
  50. V. Osinsky, V. Labunov, G. Gorokh, N. Lyahova, N. Lyahova, D. Solovey Templete layers for Si/A3B5 nanoheterostructures J. Electronics and Communication – Problems of Electronics, V.1, 2008
  51. V.I. Osinsky Information conception of image perception at solid-state lighting. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007. V. 10, N 3. P. 30-43.
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